Stray Light Feedback for Dose Control in Semiconductor Lithography Systems

ABSTRACT

A lithography system with a stray light feedback system is disclosed. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.

This is a divisional application of U.S. application Ser. No.10/995,714, which was filed on Nov. 23, 2004 and is incorporated hereinby reference.

TECHNICAL FIELD

The present invention relates generally to the manufacturing ofsemiconductor devices, and more particularly to lithography systems forsemiconductor devices.

BACKGROUND

Generally, semiconductor devices are fabricated by depositing aplurality of insulating, conductive, and semiconductive material layersover a substrate or workpiece, and patterning the various materiallayers to form integrated circuits and electronic elements thereon. Theconductive, semiconductive, and insulating material layers are patternedand etched to form integrated circuits (ICs).

To pattern a material layer, the material layer is deposited or formedover the workpiece or previously deposited material layers, and a layerof resist is deposited over the material layer. A pattern for thematerial layer is transferred to the layer of resist using lithography.For example, a photomask is typically used to image a master patternonto the resist, by exposing the resist to light or energy through orreflected from a photomask. The resist is then developed, and thematerial layer is etched using the layer of resist as a mask. The resistis then removed, and additional material layers are deposited andpatterned in a similar fashion. There may be a dozen or more lithographyphotomask levels required to manufacture an integrated circuit, forexample.

As semiconductor devices decrease in size, as is the trend in theindustry, patterning the various material layers becomes more difficult.As features become smaller, the wavelength used to develop the resist isdecreased. For example, resists that develop at 193 nm are now beingused, which provides a common Depth Of Focus (DOF) of less than 250 nm.The exposure latitude of a 193 nm resist is about 5%; thus, for mostlithography processes, centering the dose and focus close to the optimumsettings is desired, for critical dimension (CD) control and in order toreduce the number of reworks required and improve fabricationproductivity.

Scanners are used in semiconductor device manufacturing to expose resistlayers. A portion of a workpiece is typically exposed at a time, and thescanner steps from one portion of the workpiece to the next, repeatingthe process until the entire workpiece is exposed.

FIG. 1 illustrates a prior art lithography exposure tool or scanner 100.A workpiece 102 comprising a semiconductor wafer, for example, is placedon a support 104. Light, e.g., 193 nm laser light supplied by a lightsource 106, is directed through lenses 105 to a mirror 107 and isreflected to a lithography mask 108, through a lens system 110 towardsthe workpiece 102. The lens system 110 comprises a projection lenscolumn having an array of a plurality of lenses 111 and 120 inside.There may be twenty or more lenses 111 and 120 disposed inside the lenssystem 110, for example. The workpiece 102 is moved in a first direction112 and the mask 108 is moved in a second direction 114, the seconddirection 114 being opposite from the first direction 112. When theworkpiece 102 is exposed to the projected light, an image of the mask108 is formed on a resist layer on the workpiece 102.

If there is contamination on one or more lenses 111/120 of the lenssystem 110, light may scatter from the contaminated areas, referred toas stray light or scattered light. Stray light can be directed in anydirection because it is not controlled by the lens system 110, forexample.

Some semiconductor products are not very sensitive to stray light, suchas 90 nm technologies or greater, e.g., having minimum feature size ofabout 120 nm and a pitch of about 240 nm. However, other semiconductorproducts are more sensitive to stray light, e.g., semiconductor productshaving an extremely small minimum feature size. In particular, in 65 nmtechnology and below, e.g., semiconductor devices having minimum featuresizes of 65 nm or less and a pitch of about 180 nm or less, areparticularly sensitive to stray light.

If there is stray light present during the lithography process, thepatterning of the workpiece 102 can be deleteriously affected. Straylight can destroy the pattern at a particular periodicity, for example.If there is a large amount of stray light in a lithography tool such asscanner 100 shown, the tool must be shut down so that the lens system110 can be cleaned, requiring some production down time. The scanner 100needs to be re-qualified after cleaning the lens 110, which may take aday, for example. Although contamination of the lens system 110 causesstray light, it is typically not practical to clean the projection lensor lens system 110 on a frequent basis to reduce stray light, because ofthe down time and loss of use of the production tool 100. Therefore,tool 100 vendors typically recommend that an upper specification limitof stray light be reached before the tool 100 is shut down to clean thelens system 110. The upper specification limit recommended is typicallyabout 5%.

As stray light increases, a lower exposure dose is required to print afeature. Stray light illuminates regions on a wafer where illuminationis not desired. Stray light affects CD control. It is common for straylight to be present in 193 nm and 248 nm lithography tools, for example,arising from lens contamination in the path of light, causing scatteredlight.

In a production line there are many chemicals used in a fabricationfacility that can contaminate the lens system 110. Contamination sourcesinclude gases, evaporating chemicals, organic materials emitting fromthe resist material. Other contamination sources include photo-induceddeposition and particles in the equipment environment, as examples.Effects of stray light include a dose reduction for target CD, andunlike “hard” contaminations, such as large chunks of dust, stray lightcan result in a severe degradation of through pitch uniformity and adegradation of CD uniformity.

ArF scanners have been used as lithography exposure tools for a fewyears. ArF scanners utilize calcium fluoride optical elements and ArFlaser light sources. ArF scanners allow better resolution and smallertargets without applying aggressive resolution enhancement or doubleexposure techniques. However, stray light can be a problem in ArFscanners, because of the calcium fluoride optics material, coatings, andthe shorter wavelength used, which generate more stray light than priorart KrF scanners and other types of scanners, for example.

Thus, stray light is an issue that needs to be addressed insemiconductor lithography equipment.

SUMMARY OF THE INVENTION

These and other problems are generally solved or circumvented, andtechnical advantages are generally achieved, by preferred embodiments ofthe present invention, which provide novel systems and methods ofmonitoring stray light and feeding the monitored stray light data backinto the production control system.

The additional stray light measurement data is fed back to control CDspecification. The stray light feedback can be set up to occurperiodically, e.g., once a week, for example, on fully utilizedproduction tools.

In accordance with a preferred embodiment of the present invention, amethod of lithography includes providing a workpiece, the workpiecehaving a layer of resist disposed thereon, the resist having a resistsensitivity factor. An exposure tool is provided, the exposure toolcomprising a lens system and being adapted to expose the layer of resistat an exposure dose. The method includes measuring the amount of straylight of the lens system of the exposure tool, determining a stray lightdose control factor as a function of at least the amount of stray light,adjusting the exposure dose by the stray light dose control factor, andexposing the resist layer on the workpiece with the adjusted dose.

In accordance with another preferred embodiment of the presentinvention, a method of adjusting an exposure dose of a lithographysystem includes providing a first exposure tool, the first exposure toolcomprising an exposure dose, measuring stray light in the first exposuretool, and providing a resist sensitivity factor of a resist. The methodincludes calculating a dose control factor as a function of the measuredstray light and the resist sensitivity factor, and adjusting theexposure dose by the dose control factor.

In accordance with yet another preferred embodiment of the presentinvention, a lithography system includes a lens system and a support fora semiconductor workpiece proximate the lens system. The workpiece has aresist disposed thereon, and the resist comprises a resist sensitivityfactor. The system includes an exposure tool proximate the lens system,the exposure tool including a light source adapted to expose the resiston the semiconductor workpiece at an exposure dose, memory for storing ameasurement of stray light of the lens system and the resist sensitivityfactor of the resist, and a processor for determining a stray light doseadjustment factor of the exposure tool as a function of at least themeasurement of stray light, and for adjusting the exposure dose used toexpose the resist of the workpiece by the stray light dose adjustmentfactor.

In accordance with another preferred embodiment of the presentinvention, a lithography system includes an exposure tool, a means ofmonitoring stray light within the exposure tool, and a control systemfor controlling the exposure dose of the exposure tool. A measurement ofmonitored stray light is fed back to the control system and is used toadjust the exposure dose of the exposure tool.

Advantages of embodiments of the present invention include a reductionin the number of reworks for semiconductor devices. The method is easilyimplementable in a feedback system of a specific lithography tool or ina fabrication facility, for example. The stray light information in thefeedback system may be used to selectively shut down the lithography ofspecific semiconductor devices, resists, or material layers on aparticular tool. Scanners with a large amount of stray light, e.g.,above a predetermined threshold level, may be used to fabricatesemiconductor devices that are less sensitive to stray light, whilescanners with stray light measured below the threshold level may be usedto fabricate semiconductor devices sensitive to stray light, forexample. One or more threshold levels of stray light may be set.

The foregoing has outlined rather broadly the features and technicaladvantages of embodiments of the present invention in order that thedetailed description of the invention that follows may be betterunderstood. Additional features and advantages of embodiments of theinvention will be described hereinafter, which form the subject of theclaims of the invention. It should be appreciated by those skilled inthe art that the conception and specific embodiments disclosed may bereadily utilized as a basis for modifying or designing other structuresor processes for carrying out the same purposes of the presentinvention. It should also be realized by those skilled in the art thatsuch equivalent constructions do not depart from the spirit and scope ofthe invention as set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a cross-sectional view of a prior art lithography system;

FIG. 2 shows a perspective view of a lithography system or exposure toolin accordance with an embodiment of the present invention;

FIG. 3 is a block diagram of the control system shown in FIG. 2;

FIG. 4 is a flow chart for a method of the present invention, wherein astray light dose control factor is calculated as a function of themonitored stray light of a lithography tool and a resist sensitivityfactor, and the exposure dose is adjusted by the stray light dosecontrol factor;

FIG. 5 is a flow chart for a method of determining if a lithography toolshould be shut down if a particular stray light threshold is reached orexceeded;

FIG. 6 is a graph illustrating the increase in stray light of alithography tool over time, wherein the stray light decreases after thelens system is cleaned; and

FIG. 7 is a graph illustrating that a decrease in stray light decreasesthe CD of patterns formed, demonstrating that the dose may be adjustedto achieve the desired CD of a semiconductor device.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the preferredembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The present invention will be described with respect to preferredembodiments in a specific context, namely a stray light feedback systemand method for an exposure tool of a semiconductor device usingtransmissive lithography masks. The invention may also be applied,however, to other exposure tools used in other industries, and toexposure tools used with reflective lithography masks of semiconductordevices, as examples.

In many semiconductor device facilities, stray light is measured on alithography exposure tool relatively infrequently, e.g., about once ortwice a month, for example. A method referred to as the Kirk method isoften used to measure stray light, as an example. A stray light testmask having a large opaque region is measured, using a light sensor, forexample, and the amount of stray light that passes by even in thepresence of the large opaque region is a function of the amount of straylight in the exposure tool. If the stray light measured is less thanabout 5%, the exposure tool is continued to be used as usual for thepatterning of semiconductor devices.

However, with the use of ArF scanners and semiconductor devices havingsmaller CDs, about 2.5% or greater stray light is an excessive amount ofstray light in some applications. This results in a large number ofsemiconductor devices requiring re-works, which is time-consuming andcostly. Thus, the current methods of monitoring stray light and thethresholds of acceptable stray light are unacceptable for the productionof some semiconductor devices.

If the stray light exceeds 5%, to reduce the stray light in alithography tool, the lithography tool is shut down for a day or more,and the lens system is cleaned. The lens system may include twenty ormore lenses contained in a controlled chamber, although only one or twolenses are exposed to the ambient environment of the exposure tool.However, the lenses sealed in the lens system may be contaminated byfilms or particles, even in a sealed lens system. Typically, when thelens system is cleaned, the two outer-most lenses of the lens system arecleaned. The lens systems used in lithography tools are typically quitecostly, e.g., and may comprise multi-million dollar lens systems, forexample. After the lens system is cleaned, the lithography tool must berequalified. Because production is stopped for a day or more when alithography tool lens cleaning is required, the number of lens cleaningsis typically kept to a minimum. In most production facilities, eachlithography tool is cleaned about once a year, e.g., during a yearlymaintenance, requiring a down time of about 2 to 3 days, for example.

Embodiments of the present invention achieve technical advantages byfeeding back stray light information to a lithography exposure system sothat a decision can be made to shut down production of particularsemiconductor devices, mask levels, or resist types if the stray lightpercentage is too large. Until the exposure tool is cleaned to reducethe stray light, products sensitive to stray light are not processed onthat particular exposure tool. Adjustments for stray light may be madein lithography tools on a real time basis in accordance with embodimentsof the present invention. The lithography tools in a production facilitymay be categorized by the amount of stray light, and semiconductordevices more sensitive to stray light may be processed on thelithography tools having the lowest amount of stray light, for example.

FIG. 2 shows a perspective view of a lithography system or exposure tool200 in which embodiments of the present invention may be implemented.Like numerals are used in FIG. 2 as were used in FIG. 1; e.g., numeralsx02, x04, etc. represent similar elements in FIGS. 1 and 2, with x=1 inFIG. 1 and x=2 in FIG. 2, for example.

The exposure tool 200 includes a light source 206 and a lens system 210disposed between a support 204 for a semiconductor workpiece or wafer202 and the light source 206. The workpiece 202 may have a layer ofresist or photoresist disposed thereon (not shown). A mask 208 andsupport 216 are disposed between the light source 206 and the lenssystem 210, as shown. The lens system 210 comprises an array of internallenses (not shown), and includes two exposed lenses 218 and 220, asshown. One lens 218 is proximate the mask 208 and the other lens 220 isproximate the workpiece 202. The light source 206, lens system 210, mask208 and wafer 202 may be enclosed in a chamber (not shown) so that thetemperature and ambient gases may be controlled during the fabricationprocess. The lens system 210 may be mounted vertically and may be placedaway from the wafer 202 by about 5 mm, for example.

The exposure tool 200 includes a control system 222 that may comprise acomputer, for example, and an operator console comprising a monitor 224and a keyboard 226, as shown. Rather than a keyboard, the operatorconsole may comprise a combination of screens and/or buttons, levels orknobs, not shown. FIG. 3 is a block diagram of the control system 222shown in FIG. 2. The control system 222 includes a memory 230 forstoring a plurality of processing parameters for the exposure tool 200,and a processor 232 for performing calculations and analyses on theparameters and measurements made by other elements of the tool 200.

An exposure dose is the amount of energy or light that is directedtowards a workpiece 202 during an exposure. The exposure dose iscontrollable to a specified limit. In accordance with an embodiment ofthe invention, depending on the amount of stray light measured in theexposure tool 200, the exposure dose can be controlled below the limitto bring the semiconductor product into the specification. The straylight measurement is fed back to the control system 222 to adjust theexposure dose of the exposure tool 200 because the stray light is aparticular quantity. After the layer of resist on the workpiece 202 isexposed, the resist is developed, and the resist is used as a mask whilea material layer beneath the resist is patterned, for example.

FIG. 4 shows a flow chart 240 that illustrates an example of a method ofimplementing an embodiment the present invention. The flow chart 240will next be described, with reference also to the exposure tool 200shown in FIGS. 2 and 3. The stray light of the exposure tool 200 ismeasured or monitored (step 242). Stray light is typically measured interms of a percentage. The stray light is measured by completelyblocking one area so that no light is expected to pass through theblocked area, e.g., using the Kirk test. If no light passes through theblocked area, then the stray light is 0%. However, if there is straylight in the system, then some light passes by the blocked area, and thestray light percentage increases. Stray light is also referred to in theart as “flare.”

The resist sensitivity factor for a resist that will be deposited on theworkpiece 202 is input by an operator into the control system 222 (step244). The resist sensitivity is a function of the particular resistselected. Some resists are more sensitive than others, for example. Theresist sensitivity is typically a parameter that is obtained from amanufacturer of the resist when the resist is selected or purchased, forexample. The unit of resist sensitivity is typically measured innm/milliJoules, for example. Resist sensitivity is often referred to inthe art as the “dose slope.”

Next, a stray light dose control factor (SLDCF) is computed orcalculated, based on the resist sensitivity factor and the stray lightmeasured (step 246). The stray light dose control factor is a functionof the stray light measured (SL) and the resist sensitivity (RS), asshown in Equation 1:

SLDCF=f(SL, RS)  Eq. 1

The stray light dose control factor varies for different types ofresists. The stray light dose control factor also varies from onelithography tool 200 to the next. The stray light dose control factoralso varies between the particular semiconductor devices that are to bepatterned, for example.

In one embodiment, the stray light dose control factor is calculated foreach type of resist used on a lithography tool 200.

In another embodiment, the stray light dose control factor is calculatedfor only one type of resist used on the lithography tool 200. In thisembodiment, the type of resist used to calculate the stray light dosecontrol factor is referred to as a reference resist. An equation thatmay be used to calculate the dose control factor in this embodiment isshown in Equation 2, below:

$\begin{matrix}{\Delta  {\quad\mspace{11mu} {{{Dose} = {{\begin{Bmatrix}\begin{matrix}{{SS}\left( {{reference}\mspace{14mu} {resist}} \right)*} \\{\% \mspace{14mu} {stray}\mspace{14mu} {light}}\end{matrix} \\{\mspace{14mu} \left( {{reference}\mspace{14mu} {resist}} \right)}\end{Bmatrix}* \frac{{DS}\left( {{reference}\mspace{14mu} {resist}} \right)}{{DS}\left( {{resist}X} \right)}{where}{DS}} = \frac{\Delta \; {CD}}{\Delta \; {Dose}}}};{{SS} = \frac{\Delta \; {Dose}}{\Delta \% \mspace{14mu} {StrayLight}}};}}} & {{Eq}.\mspace{14mu} 2}\end{matrix}$

wherein DS is the dose slope calculated for a particular material layerand a particular resist at a reference CD, “SS (reference resist)” isthe stray light sensitivity of a reference resist at a referencecritical dimension (CD), “resist X” comprises a resist that will be usedto pattern a material layer on a workpiece, and “% stray light(reference resist)” comprises the stray light measured for the referenceresist. The SS is measured only for the reference resist and is genericfor a particular material layer, e.g., for a metal level or a via level.

The DS is the resist sensitivity factor that is calculated for a resistand is also used in day-to-day dose feedback control. DS (referenceresist) in Equation 2 is the DS that is calculated for the referenceresist. DS (resistX) is the DS that is calculated for the resist thatwill be used to pattern a material layer on a workpiece. If thereference resist is the type of resist that will be used to pattern amaterial layer on a workpiece, then

${\frac{{DS}\left( {{reference}\mspace{14mu} {resist}} \right)}{{DS}\left( {{resist}X} \right)} = 1},$

and this term does not influence the result of the equation.

Therefore, combining two pieces of information, namely the resistsensitivity and the stray light, a stray light dose control factor isdetermined. The stray light dose control factor calculated representsthe amount the dose is adjusted to accommodate the presence of straylight in the exposure tool.

Next, the exposure dose of the exposure tool 200 is adjusted by thestray light dose control factor (step 250), e.g., by the processor 232of the control system 222. Other dose control parameters or factors mayalso be input to the tool 200 (step 248). One example of other dosecontrol factors includes a statistical feedback parameter such as thedose used for previous lots. Another example of other dose controlfactors is a matching parameter. For example, if there is more than onelithography tool in a production facility, the doses of the lithographytools may be matched with a matching parameter. The matching parametermay comprise a calibration factor for a plurality of lithography tools,for example. Other dose control factors may also be used to adjust theexposure dose, for example.

After the exposure dose is adjusted, the value of adjusted dose isstored in a device specific recipe (step 252), e.g., in the memory 230of the control system 222. A plurality of adjusted dose values may bestored in the memory 230 of the control system 222, for example.

There are typically several types of resists used with a singlelithography tool. For example, there may be 2 to 6 different types ofresists used with one lithography tool. Each resist may have a differentexposure dose, for example. Thus, a stray light dose control factor foreach different type of resist is preferably determined (step 246) and isused to adjust the exposure dose (step 250), in accordance withembodiments of the present invention. Usually a limited number of typesof resists, e.g., about 10 or less, are used on one exposure tool, tomaintain controllability of the lithography process, for example.

In one embodiment, the stray light dose control factor is determinediteratively. For example, the desired effective dose can be known. Forexample, a critical dimension (CD) of 90+/−5 nm may be desired. Theresist sensitivity is a known value. Different stray light dose controlfactors may be tried and implemented in a lithography system, to see ifthe desired CD is achieved, for example. The process may be repeatedwith different stray light dose control factors until the desired CDand/or CD range is achieved, for example.

The optimum stray light dose control factor may then be stored into thesystem and used for future exposure of semiconductor devices of thatparticular type and resist type. In addition, or alternatively, afterthe exposure dose is adjusted, the adjusted exposure dose may be savedin the memory 230, so that when that particular type of resist andsemiconductor device is in the future desired to be processed, theadjusted exposure dose can be retrieved. The particular parameters andsettings for a particular semiconductor device product and resist layerare referred to in the art as a “recipe,” for example. Thus, theadjusted exposure dose and/or stray light dose control factor may besaved as a parameter of a recipe.

FIG. 5 shows a flow chart 260 for a method of determining if alithography tool should be shut down if a particular stray lightthreshold is reached or exceeded. A threshold for stray light (SL_(TH))is input to the control system 222 (e.g., by an operator using theoperator console 224/226) and stored in memory 230 (step 262). The straylight (SL_(M)) of the tool 200 is monitored or measured (step 264) andmay also be stored in the memory 230 (step 264). The processor 232queries whether the stray light measured SL_(M) is greater than thethreshold SL_(TH) for stray light (step 266). If SL_(M)<SL_(TH), theexposure tool 200 is used to pattern the product 202 (step 270).However, if SL_(M)>SL_(TH), that particular exposure tool 200 is notused to pattern that particular product 202 (step 268). Thus, if aparticular stray light threshold level for a resist and particularsemiconductor device is reached, the production line can be shut down,to avoid manufacturing a large number of defective products 202, forexample. For example, if a stray light of about 2.5% or greater isdetected, the exposure of a particular type of resist on semiconductordevices may be discontinued.

The screening with respect to the threshold level for stray light may beinclusive or exclusive of the threshold value SL_(TH), depending on thedesired results, for example. For example, if SL_(M)<=SL_(TH), the tool200 may be used to pattern the product 202 (step 270), or ifSL_(M)>=SL_(TH), that particular exposure tool 200 may not be used topattern that particular product 202 (step 268).

The flow charts shown in FIGS. 4 and 5 may be used separately ortogether, in accordance with preferred embodiments of the presentinvention.

Thus, in accordance with a preferred embodiment of the presentinvention, if the stray light of an exposure tool 200 is about 1%, thatis an acceptable amount, and the exposure dose is adjusted by the straylight dose control factor to accommodate for the stray light. Inparticular, because the stray light increases the amount of exposure tolight by the resist layer on the workpiece 202, the exposure dose isreduced by the amount of the stray light. If there is stray light in thelithography tool 200, reducing the exposure dose increases thelikelihood that the pattern will be reproduced from the lithography mask208 to the resist layer on the workpiece 202 as desired, for example.However, if there is too much stray light in the exposure tool 200,e.g., about 2.5% or greater stray light, the tool 200 is shut down,because patterns transferred would not be reproduced on the resist layeron the workpiece 202 as desired.

In accordance with a preferred embodiment of the present invention, thestray light is monitored periodically, e.g., once a week. However,alternatively, in accordance with embodiments of the present invention,the stray light of an exposure tool 200 may be monitored more or lessfrequently, for example. The stray light may be monitored on a set timeschedule or interval, such as monthly, bimonthly, weekly, bi-weekly,daily, hourly, or after a predetermined number of minutes, for example.The predetermined number of minutes may comprise about 1 minute to about59 minutes, as examples, although alternatively, the predeterminednumber of minutes may comprise other time intervals. In someapplications, the stray light may be monitored after a predeterminednumber of lots of workpieces have been processed, or on a lot-by-lotbasis, for example. The predetermined number of lots may comprise about2 to about 100 or 1000, as examples, although alternatively, thepredetermined number of lots may comprise other numbers.

In a production facility, typically there are two or more exposuretools. Preferably, in accordance with an embodiment of the presentinvention, if a first lithography tool is found to have a stray lightpercentage of about 2.5 or greater, for example, semiconductor devicesnot sensitive to stray light, e.g., having relatively large minimumfeature sizes, e.g., 90 nm or greater, are processed on the firstlithography tool. However, semiconductor devices that are sensitive tostray light are not processed on the first lithography tool. Rather,stray light sensitive devices may be processed on a second lithographytool having a stray light percentage of about 2.5 or less, for example.Whether or not a semiconductor device can be processed on a firstlithography tool or a second lithography tool may also be a function ofthe type of resist used, for example.

Embodiments of the present invention may be implemented on existinglithography tools. For example, a software modification may be used toadjust the dose in accordance with the stray light measured in thesystem, for example. Embodiments of the present invention are preferablymanifested in a control system 222 of a lithography tool, for example,as shown in FIG. 2. The resist sensitivity factor of a resist is avariable that is typically already used in a lithography tool. The straylight measured is input and the control system 222 calculates the straylight dose control factor, for example.

The stray light dose control factor of embodiments of the presentinvention preferably comprises a positive or negative value, forexample. The dose is adjusted by the stray light dose control factor, asshown in Eq. 3:

adjusted dose=stray light dose control factor+(other dose controlfactors*D);  Eq. 3

where D is the exposure dose for the particular resist being used, forexample. In the absence of the other dose control factors, for example,the adjusted dose may be greater than or less than the exposure dose Dof the resist, because the stray light dose control factor is negativefor increasing stray light, and positive for decreasing stray light.

FIG. 6 is a graph showing results from the measurement of stray light inan exposure tool 200, measured using two sizes of opaque blocks. Forexample, graph 280 indicates the stray light measured by a sensordisposed beneath a 33×33 μm opaque block on a test lithography mask, andgraph 282 indicates the stray light measured by a sensor disposedbeneath a 108×108 μm opaque block on a test lithography mask. The 33 μmopaque block and the 108 μm opaque block may be disposed on the sametest lithography mask, for example. As shown in FIG. 6, the stray lightbecomes larger as time goes on. For example, in month 1, the stray lightis about 1.0 to 1.1, and in month 14, the stray light is 3.1 and 3.5,respectively. At month 14, defective products were noticed. Thelithography system was shut down, and the lens system was cleaned,resulting in a decrease of stray light detected after month 14, asshown.

Stray light presents an unusual problem in that the stray light may notaffect the monitored patterns, but it may affect certain parts of anintegrated circuit, resulting in poor performance. The performanceproblems may not be detected by the semiconductor device manufacturer,but may be noticed by the end customer to whom the semiconductor devicesare shipped. The semiconductor devices may not work as intended. Thiscan occur because not every semiconductor device is tested beforeshipping; rather, devices are typically electrically tested on aperiodic sampling basis.

FIG. 7 is a graph of critical dimension (CD) versus exposure dose for asemiconductor product for a plurality of batches, e.g., batch 1 throughbatch 29, wherein the batches occur sequentially over time. The desiredCD for the semiconductor product is 90 nm or 0.090 μm. The graph shows aminimum CD for each batch at 288, a maximum CD at 284, and a mean CD286, for example. Variations in the CD may be caused by variations inthe measurement tool as well as stray light in the exposure tool 200,for example. The CD is related to exposure dose in that as the exposuredose is increased, the space formed in the resist increases. For batches1 through batch 11, an exposure dose of 28 milliJoules/cm² was used.However, at this exposure dose, the mean CD was often 0.093 μm orgreater. Over time, and with additional contamination of the lenssystem, the stray light continued to increase, so the exposure dose wasdecreased to 28.5 milliJoules/cm¹². After batch 25 was run, the lenssystem 210 of the exposure tool 200 (see FIG. 2) was cleaned, resultingin a reduction in the stray light, causing a decrease in CD to a mean ofabout 0.084 μm, as shown in batch 26 through batch 29. After batch 29,to achieve a mean CD of about 0.090 μm, the exposure dose was increasedto 29.5 milliJoules/cm², not shown in the graph.

Thus, after a lens system 210 of an exposure tool 200 is cleaned, inaccordance with an embodiment of the invention, the stray light ismeasured again and the exposure dose is adjusted. Adjusting the exposuredose after a lens system 210 cleaning typically requires an increase inthe exposure dose, because the stray light is reduced after a lenssystem 210 is cleaned, for example. The graph shown in FIG. 7illustrates how the stray light effects exposure dose control, e.g.,batches 26 through 29 have a lower CD by about 0.008 μm.

Embodiments of the present invention use stray light as a feedbackparameter. Within the upper control limit, stray light data is fed backto the dose decision algorithm (e.g., shown in FIGS. 4 and 5) in afeedback loop. Depending on the sensitivity of stray light, products ormask layers may be shut down on the scanner or exposure tool 200 by thefeedback system.

In a semiconductor device production facility, there are typicallyseveral scanners available in the fabrication facility. In accordancewith embodiments of the present invention, scanners with a large amountof stray light e.g., above a predetermined threshold level, may be usedto fabricate semiconductor devices that are less sensitive to straylight, while scanners with stray light measured below the thresholdlevel are used to fabricate semiconductor devices sensitive to straylight, for example.

Advantages of embodiments of the present invention include a reductionin the number of reworks for semiconductor devices 202. The method iseasily implementable in a feedback system of a specific tool 200 or in afabrication facility, for example. The stray light information in thefeedback system may be used to selectively shut down the lithography ofspecific semiconductor devices 202 or material layers on a particulartool 200. Scanners or exposure tools 200 with a large amount of straylight, e.g., above a predetermined threshold level, may be used tofabricate semiconductor devices 202 that are less sensitive to straylight, while scanners 200 with stray light measured below the thresholdlevel may be used to fabricate semiconductor devices 202 sensitive tostray light, for example. One or more threshold levels of stray lightmay be set. The stray light may be monitored at periodic intervals, suchas monthly, bimonthly, weekly, bi-weekly, daily, hourly, orpredetermined number of minute time intervals, a predetermined number oflots of workpieces, or a lot-by-lot basis, as examples.

Although embodiments of the present invention and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the invention as defined by the appended claims.For example, it will be readily understood by those skilled in the artthat many of the features, functions, processes, and materials describedherein may be varied while remaining within the scope of the presentinvention. Moreover, the scope of the present application is notintended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present invention,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present invention. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

1. A lithography system, comprising: a lens system; a support for a semiconductor workpiece proximate the lens system, the workpiece having a resist disposed thereon, the resist comprising a resist sensitivity factor; an exposure tool proximate the lens system, the exposure tool including a light source adapted to expose the resist on the semiconductor workpiece at an exposure dose; memory for storing a measurement of stray light of the lens system, a threshold level for stray light and the resist sensitivity factor of the resist; a processor for determining a stray light dose control factor of the exposure tool as a function of at least the measurement of stray light and the resist sensitivity factor; and a shut down function adapted to notify an operator of the lithography system if the threshold level is reached or exceeded.
 2. The lithography system according to claim 1, wherein the processor is adapted to adjust the exposure dose used to expose the resist of the workpiece by the stray light dose control factor.
 3. The lithography system according to claim 1, wherein the memory is further adapted to store a value of an adjusted exposure dose.
 4. The lithography system according to claim 1, wherein the processor is adapted to determine the stray light dose control factor using equation: $\begin{matrix} {\Delta  {\quad\mspace{11mu} {{{Dose} = {\begin{Bmatrix} \begin{matrix} {{SS}\left( {{reference}\mspace{14mu} {resist}} \right)*} \\ {\% \mspace{14mu} {stray}\mspace{14mu} {light}} \end{matrix} \\ {\mspace{14mu} \left( {{reference}\mspace{14mu} {resist}} \right)} \end{Bmatrix}* \frac{{DS}\left( {{reference}\mspace{14mu} {resist}} \right)}{{DS}\left( {{resist}X} \right)}}};{{where}{{DS} = \frac{\Delta \; {CD}}{\Delta \; {Dose}}}};{{SS} = \frac{\Delta \; {Dose}}{\Delta \% \mspace{14mu} {StrayLight}}};}}} & {{{Eq}.}\;} \end{matrix}$ wherein DS is the dose slope calculated for a particular material layer and a particular resist at a reference critical dimension (CD), “SS (reference resist)” is the stray light sensitivity of a reference resist at the reference CD, “resist X” comprises a resist that will be used to pattern a material layer on a workpiece, and “% stray light (reference resist)” comprises the stray light measured for the reference resist.
 5. The lithography system according to claim 1, wherein the threshold level for stray light is 2.5% or greater.
 6. A lithography system, comprising: an exposure tool; means of monitoring stray light within the exposure tool; and a control system for controlling an exposure dose of the exposure tool, wherein a measurement of monitored stray light is fed back to the control system and is used to adjust the exposure dose of the exposure tool.
 7. The lithography system according to claim 6, wherein the exposure tool is used for lithography of a semiconductor workpiece having a layer of resist disposed thereon, the resist comprising a resist sensitivity factor, wherein the exposure dose of the exposure tool is adjusted as a function of the resist sensitivity factor.
 8. The lithography system according to claim 6, further comprising storing means coupled to the control system.
 9. The lithography system according to claim 8, wherein storing means are adapted to store a threshold level for stray light.
 10. The lithography system according to claim 9, wherein the lithography system further comprises shutting down means and wherein the lithography system is shut down when the threshold level for stray light is reached or exceeded.
 11. The lithography system according to claim 10, wherein the threshold level for stray light is 2.5% or greater.
 12. The lithography system according to claim 8, wherein the exposure dose is adjusted by a stray light dose control factor.
 13. The lithography system according to claim 12, wherein the stray light dose control factor is calculated by using Equation: $\begin{matrix} {\Delta  {\quad\mspace{11mu} {{{Dose} = {\begin{Bmatrix} \begin{matrix} {{SS}\left( {{reference}\mspace{14mu} {resist}} \right)*} \\ {\% \mspace{14mu} {stray}\mspace{14mu} {light}} \end{matrix} \\ {\mspace{14mu} \left( {{reference}\mspace{14mu} {resist}} \right)} \end{Bmatrix}* \frac{{DS}\left( {{reference}\mspace{14mu} {resist}} \right)}{{DS}\left( {{resist}X} \right)}}};{{where}{{DS} = \frac{\Delta \; {CD}}{\Delta \; {Dose}}}};{{SS} = \frac{\Delta \; {Dose}}{\Delta \% \mspace{14mu} {StrayLight}}};}}} & {{{Eq}.}\;} \end{matrix}$ wherein DS is the dose slope calculated for a particular material layer and a particular resist at a reference critical dimension (CD), “SS (reference resist)” is the stray light sensitivity of a reference resist at the reference CD, “resist X” comprises a resist that will be used to pattern a material layer on a workpiece, and “% stray light (reference resist)” comprises the stray light measured for the reference resist.
 14. The lithography system according to claim 12, wherein a value of the exposure dose adjusted by the dose control factor is stored in the storage means.
 15. The lithography system according to claim 6, further comprising a lens system proximate the exposure tool.
 16. The lithography system according to claim 15, further comprising a lithography mask arranged between the lens system and the exposure tool.
 17. A lithography system, comprising: an exposure tool; a monitoring device for monitoring stray light; a memory for storing a resist sensitivity factor of a resist; and a control system for calculating a stray light dose control factor wherein the stray light dose control factor is calculated using the equation: $\begin{matrix} {\Delta  {\quad\mspace{11mu} {{{Dose} = {\begin{Bmatrix} \begin{matrix} {{SS}\left( {{reference}\mspace{14mu} {resist}} \right)*} \\ {\% \mspace{14mu} {stray}\mspace{14mu} {light}} \end{matrix} \\ {\mspace{14mu} \left( {{reference}\mspace{14mu} {resist}} \right)} \end{Bmatrix}* \frac{{DS}\left( {{reference}\mspace{14mu} {resist}} \right)}{{DS}\left( {{resist}X} \right)}}};{{where}{{DS} = \frac{\Delta \; {CD}}{\Delta \; {Dose}}}};{{SS} = \frac{\Delta \; {Dose}}{\Delta \% \mspace{14mu} {StrayLight}}};}}} & {{{Eq}.}\;} \end{matrix}$ wherein DS is the dose slope calculated for a particular material layer and a particular resist at a reference critical dimension (CD), “SS (reference resist)” is the stray light sensitivity of a reference resist at the reference CD, “resist X” comprises a resist that will be used to pattern a material layer on a workpiece, and “% stray light (reference resist)” comprises the stray light measured for the reference resist and wherein the exposure dose of the exposure tool is adjusted by the stray light control factor.
 18. The lithography system according to claim 17, wherein an exposure dose is adjusted by the stray light dose control factor.
 19. A lithography system according to claim 17, further comprising a shut down function adapted to notify an operator of the lithography system if a threshold level for stray light is reached or exceeded.
 20. The lithography system according to claim 17, wherein the threshold level for stray light is 2.5% or greater. 